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| Bulletin I25165 rev. C 03/03 ST180S SERIES PHASE CONTROL THYRISTORS Stud Version Features Center amplifying gate Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200V) International standard case TO-209AB (TO-93) Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling 200A Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM /V RRM tq TJ typical ST180S 200 85 314 5000 5230 125 114 400 to 2000 100 - 40 to 125 Units A C A A A KA2s KA2s V s C case style TO-209AB (TO-93) www.irf.com 1 ST180S Series Bulletin I25165 rev. C 03/03 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 04 08 ST180S 12 16 20 V DRM/V RRM , max. repetitive peak and off-state voltage V 400 800 1200 1600 2000 VRSM , maximum nonrepetitive peak voltage V 500 900 1300 1700 2100 I DRM /I RRM max. @ TJ = TJ max mA 30 On-state Conduction Parameter I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current ST180S 200 85 314 5000 5230 4200 4400 Units Conditions A C A DC @ 76C case temperature t = 10ms t = 8.3ms A t = 10ms t = 8.3ms t = 10ms KA2 s t = 8.3ms t = 10ms t = 8.3ms KA2 s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. 180 conduction, half sine wave I 2t Maximum I2t for fusing 125 114 88 81 I 2t Maximum I2t for fusing 1250 1.08 t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Max. (typical) latching current V 1.14 (I > x IT(AV)),TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. m 1.14 1.75 600 mA 1000 (300) TJ = TJ max, anode supply 12V resistive load V (I > x IT(AV)),TJ = TJ max. Ipk= 570A, TJ = 125C, tp = 10ms sine pulse 1.18 Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time Typical turn-off time ST180S 1000 1.0 Units Conditions A/s Gate drive 20V, 20, tr 1s TJ = TJ max, anode voltage 80% VDRM Gate current 1A, di g /dt = 1A/s s Vd = 0.67% VDRM, TJ = 25C ITM = 300A, TJ = TJ max, di/dt = 20A/s, VR = 50V dv/dt = 20V/s, Gate 0V 100, tp = 500s 100 2 www.irf.com ST180S Series Bulletin I25165 rev. C 03/03 Blocking Parameter dv/dt IDRM IRRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current ST180S 500 30 Units Conditions V/s mA TJ = TJ max linear to 80% rated VDRM TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM IGM +VGM -VGM Maximum peak gate power ST180S 10 2.0 3.0 20 Units Conditions W A TJ = TJ max, t p 5ms TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t p 5ms PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. IGT DC gate current required to trigger 180 90 40 VGT DC gate voltage required to trigger 2.9 1.8 1.2 IGD VGD DC gate current not to trigger DC gate voltage not to trigger V 5.0 MAX. 150 3.0 10 0.25 mA V V mA TJ = TJ max, tp 5ms TJ = - 40C TJ = 25C TJ = 125C TJ = - 40C TJ = 25C TJ = 125C Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = TJ max Thermal and Mechanical Specification Parameter TJ Tstg Max. operating temperature range Max. storage temperature range ST180S -40 to 125 -40 to 150 0.105 Units Conditions C RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, 10% DC operation K/W 0.04 31 (275) 24.5 (210) Mounting surface, smooth, flat and greased Non lubricated threads Nm (lbf-in) Lubricated threads g See Outline Table wt Approximate weight Case style 280 TO - 209AB (TO-93) www.irf.com 3 ST180S Series Bulletin I25165 rev. C 03/03 RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle 180 120 90 60 30 Sinusoidal conduction Rectangular conduction Units 0.015 0.019 0.025 0.036 0.060 0.012 0.020 0.027 0.037 0.060 K/W Conditions TJ = TJ max. Ordering Information Table Device Code ST 1 18 2 0 3 S 4 20 5 P 6 0 7 8 1 2 3 4 5 6 7 - Thyristor Essential part number 0 = Converter grade S = Compression bonding Stud Voltage code: Code x 100 = VRRM (See Voltage Rating Table) P = Stud base 3/4"-16UNF2A threads 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 8 - V = Glass-metal seal (only up to 1200V) None = Ceramic housing (over 1200V) NOTE: For Metric device M16 x 1.5 Contact factory 4 www.irf.com ST180S Series Bulletin I25165 rev. C 03/03 Outline Table GLASS METAL SEAL 19 (0.75) MAX. )M IN 8.5 (0.33) DIA. 4.3 (0.17) DIA. 9 .5 ( 0. FLEXIBLE LEAD C.S. 25mm 2 (0.039 s.i.) RED SILICON RUBBER 10 (0.39) RED CATHODE C.S. 0.4mm (0.0006 s.i.) WHITE GATE 2 22 (0 . 86 ) MI N. 37 . 4 (0.16) MAX. Fast-on Terminals +I 210 (8.26) AMP. 280000-1 REF-250 90 (3.54) MIN. RED SHRINK 220 (8.66) + 10 (0.39) WHITE SHRINK 38.5 (1.52) 16 (0.63) MAX. MAX. 28.5 (1.12) MAX. DIA. 27.5 (1.08) MAX. SW 32 3/4"-16UNF-2A * 35 (1.38) MAX. Case Style TO-209AB (TO-93) All dimensions in millimeters (inches) * FOR METRIC DEVICE: M16 X 1.5 - LENGHT 21 (0.83) MAX. CONTACT FACTORY CERAMIC HOUSING 19 (0.75) MAX. 4 (0.16) MAX. 4.3 (0.17) DIA. (0 . 37 ) 9 .5 MI 8.5 (0.33) DIA. RED SILICON RUBBER 10 (0.39) C.S. 0.4mm RED CATHODE (0.0006 s.i.) WHITE GATE 2 (0.039 s.i.) +I 210 (8.26) 90 (3.54) MIN. RED SHRINK 220 (8.66) + 10 (0.39) WHITE SHRINK 38.5 (1.52) 16 (0.63) MAX. MAX. 27.5 (1.08) MAX. DIA. 27.5 (1.08) MAX. SW 32 3/4"-16UNF-2A * 35 (1.38) MAX. * FOR METRIC DEVICE: M16 X 1.5 - LENGHT 21 (0.83) MAX. CONTACT FACTORY 22 FLEXIBLE LEAD C.S. 25mm 2 (0 .86 ) MI N. N. www.irf.com 5 ST180S Series Bulletin I25165 rev. C 03/03 Maximum Allowable Cas T e emperat ure (C) Maximum Allowable Case T emperature (C) 130 S 180S S T eries RthJC (DC) = 0.105 K/ W 120 130 120 110 S 180S S T eries RthJC (DC) = 0.105 K/ W 110 Conduc tion Angle Conduc tion Period 100 90 30 80 70 0 50 100 150 200 250 300 350 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 100 30 60 90 120 180 90 60 90 120 180 DC 80 0 40 80 120 160 200 240 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Maximum Average On-s tate Power Loss (W) 350 300 250 200 150 Conduc tion Angle 180 120 90 60 30 RMS Limit A hS Rt 0. 16 0. 2 K/ W 1 0. W K/ = 08 0. W K/ 0.3 K/ W K/ W ta el -D 0.4 K/ W R 0.5 K/ W 0.8 K/ W 1.2 K /W 100 50 0 S 180SS T eries TJ = 125C 0 40 80 120 160 200 25 240 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient T emperature (C) Fig. 3 - On-state Power Loss Characteristics Maximum Average On-state Power Los (W) s 500 450 400 350 300 250 200 150 100 50 0 0 40 80 120 160 200 240 280 320 25 DC 180 120 90 60 30 RMSLimit Conduction Period R 0. 1 0. 16 th SA K/ W K/ W = 0. 08 K/ W 0.2 -D e lt S 180SS T eries TJ = 125C 0.3 K/ W 0.4 K/ W 0.5 K/ W 0.8 K /W 1.2 K/ W K/ W a R 50 75 100 125 Average On-state Current (A) Maximum Allowable Ambient T emperature (C) Fig. 4 - On-state Power Loss Characteristics 6 www.irf.com ST180S Series Bulletin I25165 rev. C 03/03 Peak Half S Wave On-state Current (A) ine Peak Half S Wave On-state Current (A) ine 4800 At Any Rated Load Condition And With Rated VRRM Applied Following S urge. 4400 Initial T = 125C J @60 Hz 0.0083 s 4000 @50 Hz 0.0100 s 3600 3200 2800 2400 2000 1 10 100 Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N) 5500 Maximum Non Repetitive S urge Current Vers Pulse T us rain Duration. Control 5000 Of Conduc tion May Not Be Maintained. Initial T = 125C J 4500 No Voltage Reapplied Rated VRRM Reapplied 4000 3500 3000 2500 2000 0.01 S 180SS T eries S 180SS T eries 0.1 Pulse T rain Duration (s) 1 Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 10000 Instantaneous On-state Current (A) T = 25C J T = 125C J 1000 S 180SS T eries 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics T ransient T hermal Impedance Z thJC (K/ W) 1 S teady S tate Value RthJC = 0.105 K/ W (DC Operation) 0.1 0.01 S 180S S T eries 0.001 0.001 0.01 0.1 S quare Wave Pulse Duration (s) 1 10 Fig. 8 - Thermal Impedance Z thJC Characteristic www.irf.com 7 ST180S Series Bulletin I25165 rev. C 03/03 100 Instantaneous Gate Voltage (V) R tangular gate pulse ec a) Recommended load line for rated di/ dt : 20V, 10ohms; tr<=1 s b) Rec ommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (b) T j=-40 C (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a) tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms T j=25 C T j=125 C 1 VGD IGD 0.1 0.001 0.01 (1) (2) (3) (4) Device: S 180SS T eries 0.1 1 Frequency Limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03/03 8 www.irf.com |
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